INSCOOP communications

15- F. Glas
Modeling and quantitative analysis of self-catalyzed GaAs nanowire growth,
Communication invitée au colloque annuel du GDR PULSE (Processus ultimes d’épitaxie de semiconducteurs), 3-5 July 2013, Aix-en-Provence, France.

14- F. Glas, M. R. Ramdani, G. Patriarche, J.-C. Harmand
Predictive modeling of self-catalyzed GaAs nanowire growth,
7th Nanowire Growth Workshop, 10-12 June 2013, Lausanne, Switzerland.

13- J. Barakat, R. Anufriev, H. Dumont, J. Penuelas, N. Chauvin, C. Bru-Chevallier, G. Patriarche, M. Gendry                                                                                                    Critical parameters to self catalyze InP NWs growth by VLS-MBE,
7th Nanowire Growth Workshop, 10-12 June, 2013, Lausanne, Switzerland.

12- F. Glas
Predictive modeling of self-catalyzed GaAs nanowire growth
7th Russian-French workshop on nanosciences and nanotechnology, 2-7 June 2013, Novosibirsk, Russia.

11- J. Barakat, R. Anufriev, H. Dumont, N. Chauvin, C. Bru-Chevallier, G. Patriarche, M. Gendry                                                                                                                    Croissance auto-catalysée de nanofils d’InP sur silicium par VLS-MBE ,
JNMO 2013, 21-23 May, 2013, Evian, France.

10- Z. Lin, M. Gendry, X. Letartre                                                                                   Design of a III-V nanowires based microsource coupled to a Si waveguide for optical interconnect,
JNMO 2013, 21-23 May, 2013, Evian, France.

9- R. Anufriev, N. Chauvin, H. Khmissi, K. Naji, M. Gendry, C. Bru-Chevallier                Impact of substrate-induced strain on the optical properties of InP nanowires,
GdR Nanofils-Nanotubes Semiconducteurs, 5th Plenary Workshop, 2–5 April, 2013,
Saint-Martin-de-Londres, France.

8- J.B. Barakat, R. Anufriev, H. Dumont, J. Penuelas, N. Chauvin, C. Bru-Chevallier, M. Gendry                                                                                                                        Self-catalyzed Indium Phosphide Nanowires Grown on Silicon by VLS-MBE,
GDR Nanofils-Nanotubes Semiconducteurs, 5th plenary Worshop, 2-5 April, 2013,
Saint Martin de Londres-France.

7- F. Glas, M. R. Ramdani, G. Patriarche, J.-C. Harmand
Predictive modeling and quantitative analysis of self-catalyzed GaAs nanowire growth,
5ème réunion plénière du du GdR Nanofils semiconducteurs, 2-5 April 2013, Saint-Martin de Londres, France.

6- R. Anufriev, M.H. Hadj Alouane, N. Chauvin, H. Khmissi, K. Naji, A. Belarouci, B. Ilahi, H. Maaref, G. Patriarche, M. Gendry, C. Bru-Chevallier                                                   InAs/InP nanowire quantum rods emitting in the 1.55 µm telecommunication window on silicon substrate,                                                                                                                   6th NGW, 4-6 June, 2012, Saint-Petersbourg, Russia.

5- H. Khmissi, M.H. Hadj Alouane, K. Naji, N. Chauvin, C. Bru-Chevallier, B. Ilahi, H. Maaref, G. Patriarche, M. Gendry                                                                                         InP nanowires with InAs insertion grown by catalyst assisted molecular beam epitaxy on silicon substrates,                                                                                                           Nanoscale Science and Technology (NS&T’12), 17-19 March, 2012, , Hammamet, Tunisia.

4- M.H. Hadj Alouane, R. Anufriev, N. Chauvin, H. Khmissi, K. Naji, B. Ilahi, H. Maaref, G. Patriarche, M. Gendry, C. Bru-Chevallier                                                                     InAs/InP core-shell nanowires emitting at telecommunication wavelengths grown on silicon substrates,                                                                                                                         GDR Nanofils Semiconducteurs, 4th plenary workshop, 17-21 October, 2011, Porquerolles, France.

3- J. Even, L. Pedesseau, C. Hajlaoui, C. Katan and J-M. Jancu                                 Theory, Modelling and Computational Methods for Semiconductors,                              (TMCS III), Jan 18, 2012 – Jan 20, 2012, Leeds, United Kingdom.

2- N. Chauvin, M. Gendry et al,                                                                                     Structural and optical properties of wurzite InAs/InP nanowires grown on silicon substrates,                                                                                                                         GDR Nanofils Semiconducteurs, 4th plenary workshop,17-21 October, 2011, Porquerolles, France.

1- J. Penuelas, K. Naji, H. Dumont, G. Saint-Girons, G. Patriarche, M. Gendry            Growth directions and structural properties of InP nanowires fabricated on Si and SrTiO3 substrates,
EuroMBE 2011 20-23 March, 2011 Alpes d’Huez, France.

 

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